This device is a single N-channel SGT MOSFET qualified for industrial applications. It is rated for 60 V drain-source voltage with 6 mΩ maximum on-resistance at 10 V gate drive and 10 mΩ maximum at 4.5 V. The device supports 70 A drain current at 25 °C, with typical total gate charge of 30 nC and typical reverse-recovery charge of 45.1 nC. It has typical output capacitance of 332 pF, a 1.0 V to 2.5 V gate-threshold range, and is supplied in a TO220F package. The manufacturer lists it as a production part.
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Oriental Semiconductor SFS06R06FF technical specifications.
| Qualification | Industrial |
| Polarity | Single N |
| Number of Transistors | 1 |
| Drain-Source Voltage | 60V |
| On-Resistance Max @ 10 V | 6mΩ |
| On-Resistance Max @ 4.5 V | 10mΩ |
| Drain Current Max @ 25 °C | 70A |
| Total Gate Charge Typ | 30nC |
| Reverse Recovery Charge Typ | 45.1nC |
| Output Capacitance Typ | 332pF |
| Gate Threshold Voltage Min | 1V |
| Gate Threshold Voltage Max | 2.5V |
| Package | TO220F |
Download the complete datasheet for Oriental Semiconductor SFS06R06FF to view detailed technical specifications.
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