This device is a single N-channel SGT MOSFET for industrial applications. It is rated for 60 V drain-source voltage and 70 A drain current at 25°C. Maximum on-resistance is 6 mΩ at a 10 V gate drive and 10 mΩ at 4.5 V. Typical gate charge is 30 nC, typical reverse-recovery charge is 45.1 nC, and typical output capacitance is 332 pF. The device is offered in a PDFN5x6 package and is listed in production status.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Oriental Semiconductor SFS06R06GF datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Oriental Semiconductor SFS06R06GF technical specifications.
| Polarity | Single N |
| Number of Transistors | 1 |
| Drain-Source Voltage (VDS max) | 60V |
| On-Resistance RDS(on) max @ 10 V | 6mΩ |
| On-Resistance RDS(on) max @ 4.5 V | 10mΩ |
| Drain Current (ID max) @ 25°C | 70A |
| Gate Charge (Qg typ) | 30nC |
| Reverse Recovery Charge (Qrr typ) | 45.1nC |
| Output Capacitance (Coss typ) | 332pF |
| Gate Threshold Voltage (VGS(th) min) | 1V |
| Gate Threshold Voltage (VGS(th) max) | 2.5V |
| Pb Free | Yes |
| RoHS | Yes |
| Halogen Free | Yes |
Download the complete datasheet for Oriental Semiconductor SFS06R06GF to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
