This consumer-qualified SGT MOSFET is a single N-channel device in an SOP8 package. It is rated for 65 V drain-source voltage and 12 A drain current at 25°C, with 11 mΩ maximum on-resistance at a 10 V gate drive. Typical total gate charge is 18.4 nC, typical reverse-recovery charge is 36.1 nC, and typical output capacitance is 199 pF. The gate threshold voltage ranges from 1.5 V to 2.5 V. The product is listed as in production.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Oriental Semiconductor SFS06R10BF datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Oriental Semiconductor SFS06R10BF technical specifications.
| Qualification | Consumer |
| Configuration | Single N |
| Number of Transistors | 1 |
| Drain-Source Voltage (VDS) | 65V |
| On-Resistance RDS(on) max @10V | 11mΩ |
| Drain Current ID max @25°C | 12A |
| Total Gate Charge Qg typ | 18.4nC |
| Reverse Recovery Charge Qrr typ | 36.1nC |
| Output Capacitance Coss typ | 199pF |
| Gate Threshold Voltage VGS(th) min | 1.5V |
| Gate Threshold Voltage VGS(th) max | 2.5V |
| Polarity | Single N |
Download the complete datasheet for Oriental Semiconductor SFS06R10BF to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
