The M-DW1 is an LED-based reflective sensor designed for precision semiconductor wafer mapping. It features a two-segment receiving element to ensure accurate edge detection regardless of wafer thickness or surface shape, including glass or nitride-coated wafers. It eliminates the safety concerns of laser-based alternatives and offers a high-speed response time of 0.5ms.
Voltage12 to 24V DC
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Technical Specifications
Panasonic M-DW1 technical specifications.
General
| Center sensing distance | 45mm |
| Response time | 500μs |
| Supply voltage | 12 to 24V DC |
| Current consumption | 65 or lessmA |
| Sensing object | 3 or larger semiconductor waferinch |
| Output | NPN / PNP open-collector transistor (selectable) |
| Sensing angle | 12.5 ± 5degrees |
Compliance
| RoHS | Compliant |
| Ce | EMC Directive, RoHS Directive |
Datasheet
Panasonic M-DW1 Datasheet
Download the complete datasheet for Panasonic M-DW1 to view detailed technical specifications.
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