The M-DW1 is an LED-based reflective sensor designed for precision semiconductor wafer mapping. It features a two-segment receiving element to ensure accurate edge detection regardless of wafer thickness or surface shape, including glass or nitride-coated wafers. It eliminates the safety concerns of laser-based alternatives and offers a high-speed response time of 0.5ms.
Panasonic M-DW1 technical specifications.
| Center sensing distance | 45mm |
| Response time | 500μs |
| Supply voltage | 12 to 24V DC |
| Current consumption | 65 or lessmA |
| Sensing object | 3 or larger semiconductor waferinch |
| Output | NPN / PNP open-collector transistor (selectable) |
| Sensing angle | 12.5 ± 5degrees |
| RoHS | Compliant |
| Ce | EMC Directive, RoHS Directive |
Download the complete datasheet for Panasonic M-DW1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.