N-channel enhancement-mode GaN power FET is designed for power switching applications. It is rated for 600 V DC drain-source voltage, 15 A continuous drain current at 25 °C case temperature, and 83 W power dissipation. The device has a typical 140 mΩ on-resistance at 10 mA gate current and 5 A drain current, with 2.0 nC typical total gate charge at 400 V. Fast switching parameters include 3.4 ns typical turn-on delay, 5.2 ns rise time, 3.4 ns turn-off delay, and 2.4 ns fall time under the stated test circuit. The DFN 8x8 package has a 1.5 °C/W maximum junction-to-case thermal resistance and MSL3 260 °C reflow rating.
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| Device type | GaN-Tr |
| Application | Power switching |
| Structure | N-channel enhancement mode FET |
| Drain-source voltage, DC | 600 maxV |
| Drain-source voltage, pulse | 750 maxV |
| Gate-source voltage, DC | -10 minV |
| Gate current, DC | 19 maxmA |
| Gate current, pulse | 0.6 maxA |
| Drain current, DC at Tc=25 °C | 15 maxA |
| Drain current, pulse at Tc=25 °C | 23 maxA |
| Power dissipation at Tc=25 °C | 83 maxW |
| Junction temperature range | -55 to 150°C |
| Storage temperature range | -55 to 150°C |
| Drain-source voltage slope | 200 maxV/ns |
| Gate threshold voltage | 0.9 min, 1.2 typ, 1.6 maxV |
| Drain-source on-state resistance | 140 typ, 175 max at IGS=10 mA, IDS=5 A, Tj=25 °CmΩ |
| Input capacitance | 160 typ at VDS=400 V, VGS=0 V, 1 MHzpF |
| Total gate charge | 2.0 typ at VDD=400 V, IDS=5 AnC |
| Turn-on delay time | 3.4 typns |
| Rise time | 5.2 typns |
| Turn-off delay time | 3.4 typns |
| Fall time | 2.4 typns |
| Thermal resistance, junction-to-case | 1.5 max°C/W |
| Package body size | 8.00 nominal x 8.00 nominalmm |
| Moisture sensitivity / reflow | MSL3, 260 °C max |
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