This device is a single N-channel medium-voltage power MOSFET in a TO-252AA package. It is rated for 60 V drain-source voltage, 70 A drain current, and ±25 V gate-source voltage. The maximum on-resistance is 8.5 mΩ at 10 V gate drive. Typical input capacitance is 3116 pF and typical total gate charge is 71 nC at 10 V. The listed product status is NSND.
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Panjit International PJD70N06 technical specifications.
| Transistor Type | N-Channel |
| Configuration | Single |
| Drain-Source Voltage (VDS) | 60V |
| Gate-Source Voltage (VGS) | ±25V |
| Continuous Drain Current (ID) | 70A |
| On-Resistance Max @ 10V | 8.5mΩ |
| Input Capacitance (Ciss) Typ | 3116pF |
| Gate Threshold Voltage Max | 4V |
| Total Gate Charge (Qg) Typ @ 10V | 71nC |
| Package | TO-252AA |
| Product Status | NSND |
| Polarity | N |
