This device is a single N-channel medium-voltage MOSFET in a TO-252AA package. It is rated for 60 V drain-source voltage, ±20 V gate-source voltage, and 80 A drain current. The maximum on-resistance is 7 mΩ at 10 V gate drive. Typical input capacitance is 6352 pF, the maximum gate-threshold voltage is 4 V, and typical total gate charge is 104 nC at 10 V.
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Panjit International PJD80N06 technical specifications.
| Transistor Polarity | N |
| Configuration | Single |
| Drain-Source Voltage (VDS) | 60V |
| Gate-Source Voltage (VGS) | ±20V |
| Continuous Drain Current (ID) | 80A |
| On-Resistance Max @ VGS=10V | 7mΩ |
| Input Capacitance Typ (Ciss) | 6352pF |
| Gate Threshold Voltage Max | 4V |
| Total Gate Charge Typ @ VGS=10V | 104nC |
