This device is a 60 V N-channel enhancement-mode MOSFET in a DFN5060X-8L package. It is specified for 131 A continuous drain current at TC = 25°C and 524 A pulsed drain current, with maximum on-resistance of 3.3 mΩ at VGS = 10 V and 5.4 mΩ at VGS = 7 V. The operating junction and storage temperature range is -55°C to 150°C, and junction-to-ambient thermal resistance is 50 °C/W. It is intended for BMS, BLDC motor driver switch, and load switch applications, and uses green molding compound compliant with IEC 61249 and EU RoHS 2.0.
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Panjit International PSMQC033N06NS1 technical specifications.
| Transistor Polarity | N-Channel |
| Configuration | Single |
| Drain-Source Voltage | 60V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current (TC=25°C) | 131A |
| Continuous Drain Current (TC=100°C) | 83A |
| Pulsed Drain Current | 524A |
| Power Dissipation (TC=25°C) | 96W |
| Power Dissipation (TC=100°C) | 38W |
| Operating Junction and Storage Temperature Range | -55 to 150°C |
| Thermal Resistance Junction-to-Ambient | 50°C/W |
| Gate Threshold Voltage | 2 to 4V |
| Drain-Source On-Resistance Max. (VGS=10V, ID=40A) | 3.3mΩ |
| Drain-Source On-Resistance Max. (VGS=7V, ID=10A) | 5.4mΩ |
| Zero Gate Voltage Drain Current Max. | 1µA |
| Gate-Source Leakage Current Max. | 100nA |
| Total Gate Charge Typ. (VGS=7V) | 74nC |
| Total Gate Charge Typ. (VGS=10V) | 99nC |
| Input Capacitance Typ. | 5731pF |
| Output Capacitance Typ. | 2070pF |
| Reverse Transfer Capacitance Typ. | 120pF |
| Turn-On Delay Time Typ. | 61ns |
| Turn-On Rise Time Typ. | 106ns |
| Turn-Off Delay Time Typ. | 106ns |
| Turn-Off Fall Time Typ. | 59ns |
| Diode Forward Voltage | 0.7 typ, 1 maxV |
| RoHS | EU RoHS 2.0 compliant |
| Material | Green molding compound per IEC 61249 |
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