The PJE8408 is an N-Channel enhancement mode MOSFET featuring advanced trench process technology. It is designed for low-voltage applications such as load switches and PWM, with ESD protection integrated into the device.
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| Drain-Source Voltage | 20V |
| Continuous Drain Current | 500mA |
| Gate-Source Voltage | ±10V |
| Drain-Source On-State Resistance (Max @ 4.5V) | 400mΩ |
| Drain-Source On-State Resistance (Max @ 2.5V) | 650mΩ |
| Drain-Source On-State Resistance (Max @ 1.8V) | 800mΩ |
| Gate Threshold Voltage (Max) | 1.4V |
| Total Gate Charge (Typ) | 0.9nC |
| Input Capacitance (Typ) | 38pF |
| Rohs 2.0 | Compliant |
| Halogen Free | Compliant as per IEC 61249 |
