
NPN Bipolar Junction Transistor (BJT) for general-purpose applications. Features a maximum continuous collector current of 200mA and a collector-emitter breakdown voltage of 40V. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 300MHz. Packaged in a TO-92-3 through-hole mount, this lead-free and RoHS-compliant component operates from -55°C to 150°C.
Onsemi 2N3904BU technical specifications.
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 300mV |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | 200mA |
| Current Rating | 200mA |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 300MHz |
| Height | 4.7mm |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Length | 4.7mm |
| Max Collector Current | 200mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Package Quantity | 10000 |
| Packaging | Bulk |
| Polarity | NPN |
| RoHS Compliant | Yes |
| Transition Frequency | 300MHz |
| DC Rated Voltage | 60V |
| Weight | 0.179g |
| Width | 3.93mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi 2N3904BU to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
