The BC337_J35Z is a TO-92 packaged NPN bipolar junction transistor from Onsemi with a collector-emitter breakdown voltage of 45V and a maximum collector current of 800mA. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 625mW. The transistor has a minimum current gain of 100 and a frequency response up to 100MHz.
Frequency100MHz
PackageTO-92
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi BC337_J35Z technical specifications.
General
| Package/Case | TO-92 |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 700mV |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 100 |
| Max Collector Current | 800mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 625mW |
| Transition Frequency | 100MHz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BC337_J35Z Datasheet
Download the complete datasheet for Onsemi BC337_J35Z to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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