
PNP Bipolar Junction Transistor, SC-70 (SOT-323) 3-lead package. Features a 45V collector-emitter breakdown voltage and a maximum collector current of 100mA. Offers a transition frequency of 100MHz and a minimum hFE of 270. Operates within a temperature range of -55°C to 150°C with 150mW power dissipation. Packaged in a 3000-reel tape and reel format.
Onsemi BC857CWT1G technical specifications.
| Package/Case | SC |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | -650mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 650mV |
| Current Rating | -100mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| Height | 0.9mm |
| hFE Min | 270 |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 100mA |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150mW |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 150mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| DC Rated Voltage | -45V |
| Width | 1.35mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi BC857CWT1G to view detailed technical specifications.
No datasheet is available for this part.
