PNP Power Bipolar Junction Transistor (BJT) with a maximum collector current of 1.5A and a collector-emitter voltage of 60V. Features a low collector-emitter saturation voltage of 500mV and a transition frequency of 50MHz. Packaged in a TO-225-3 case with tin, matte contact plating, this RoHS compliant component operates from -55°C to 150°C with a power dissipation of 1.25W.
PackageTO-225-3
Current Rating-1.5A
PolarityPNP
Power1.25W
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Technical Specifications
Onsemi BD138G technical specifications.
General
| Package/Case | TO-225-3 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 500mV |
| Contact Plating | Tin, Matte |
| Current Rating | -1.5A |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 11.04mm |
| hFE Min | 25 |
| Lead Free | Lead Free |
| Length | 7.74mm |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 1.5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.25W |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 1.25W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
| DC Rated Voltage | -60V |
| Width | 2.66mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BD138G Datasheet
Download the complete datasheet for Onsemi BD138G to view detailed technical specifications.
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