
P-Channel JFET with -25V drain-source breakdown voltage and -460mA continuous drain current. Features a low 1.1Ω drain-source on-resistance and 350mW power dissipation. Operates over a wide temperature range of -55°C to 150°C. Packaged in a compact SOT-23 surface-mount case, this RoHS compliant component is ideal for digital switching applications.
Onsemi FDV304P technical specifications.
| Package/Case | SOT-23 |
| Continuous Drain Current (ID) | 460mA |
| Current Rating | -460mA |
| Drain to Source Breakdown Voltage | -25V |
| Drain to Source Resistance | 1.1R |
| Drain to Source Voltage (Vdss) | 25V |
| Drain-source On Resistance-Max | 1.5R |
| Dual Supply Voltage | -25V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 0.93mm |
| Input Capacitance | 63pF |
| Lead Free | Lead Free |
| Length | 2.92mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Surface Mount |
| Nominal Vgs | -860mV |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 350mW |
| Radiation Hardening | No |
| Rds On Max | 1.1R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Threshold Voltage | -860mV |
| Turn-Off Delay Time | 55ns |
| Turn-On Delay Time | 6ns |
| Voltage | 25V |
| DC Rated Voltage | -25V |
| Width | 1.3mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDV304P to view detailed technical specifications.
No datasheet is available for this part.
