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K4B4G1646B-HYH9

K4B4G1646B-HYH9Samsung Electronics


Description:

DRAM Chip DDR3 SDRAM 4Gbit 256Mx16 1.35V 79-Pin FBGA

Country of Origin:

Republic of Korea

Introduction date:

Dec 17, 2009

Updated: +90 days


See moreDRAM Chip by Samsung Electronics

Online version: https://www.datasheets.com/part-details/k4b4g1646b-hyh9-samsung-electronics-73793104

overviewOverview

Familiarize yourself with the fundamental general information, properties, and characteristics of the component, along with its compliance with industry standards and regulations.

LifeCycleinfo
EU RoHS
rohs yesYes
RoHS Version
2011/65/EU, 2015/863
ECCNinfo
EAR99
Automotive
noNo
Supplier Cage Codeinfo
1542F
HTSUSAinfo
8542320036
Schedule Binfo
8542320023
PPAP
noNo
AEC Qualified
noNo
Category Path
Semiconductor > Memory > Memory Chips > DRAM Chip

pdfDatasheet

Get a comprehensive understanding of the electronic component by downloading its datasheet. This PDF document includes all the necessary details, such as product overview, features, specifications, ratings, diagrams, applications, and more.

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packagePackage

The package information for the component gives important details about the product's size, weight, and packaging. This helps engineers determine if the product meets their requirements and expectations.

Basic Package Type
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Package Family Name
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Supplier Package
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Package Description
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Lead Shape
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Pin Count
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PCB
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Tabinfo
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Package Length (mm)info
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Package Width (mm)info
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Package Height (mm)info
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Package Diameter (mm)
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Mounting
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Package Outline
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parametricParametric

The parametric information displays vital features and performance metrics of the component, which helps engineers and supply chain managers to compare and choose the most appropriate electronic component for their applications and needs.

Product Line
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Minimum Storage Temperature
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Operating Supply Voltage
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Number of I/O Lines
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Number of Bits per Word
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Supplier Temperature Grade
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Process Technology
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Refresh Cycles
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Maximum Refresh Cycle Time
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Maximum Storage Temperature
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Density
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Type
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Interface Type
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Organization
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Maximum Clock Rate
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Maximum Access Time
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Number of Internal Banks
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Number of Words per Bank
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Typical Operating Supply Voltage
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Minimum Operating Supply Voltage
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Maximum Operating Supply Voltage
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Minimum Operating Temperature
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Maximum Operating Temperature
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Data Bus Width
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Address Bus Width
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Maximum Operating Current
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Density in Bits
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electrical circuitReference designs

Unlock inspiration and guidance with our collection of reference designs. Explore practical implementations showcasing the capabilities of the electronic component. Accelerate your development process and create efficient solutions with detailed documentation and schematics.

K4B4G1646B-HYH9

K4B4G1646B-HYH9By Samsung Electronics