PNP Bipolar Junction Transistor (BJT) in TO-126 package, featuring a 300V collector-emitter breakdown voltage and a continuous collector current rating of 500mA. This through-hole mounted power transistor offers a maximum power dissipation of 20W and a minimum DC current gain (hFE) of 30. Operating across a wide temperature range from -65°C to 150°C, it is RoHS compliant and lead-free.
PackageTO-126
Current Rating-500mA
MountingThrough Hole
PolarityPNP
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Technical Specifications
Onsemi MJE350STU technical specifications.
General
| Package/Case | TO-126 |
| Collector Base Voltage (VCBO) | -300V |
| Collector Emitter Breakdown Voltage | 300V |
| Collector Emitter Voltage (VCEO) | 300V |
| Collector-emitter Voltage-Max | -300V |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | -5V |
| Height | 11mm |
| hFE Min | 30 |
| Lead Free | Lead Free |
| Length | 8mm |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 20W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 60 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 20W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | -300V |
| Weight | 0.761g |
| Width | 3.25mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MJE350STU Datasheet
Download the complete datasheet for Onsemi MJE350STU to view detailed technical specifications.
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