PNP Bipolar Junction Transistor (BJT) for through-hole mounting in a TO-92-3 package. Features a maximum collector-emitter voltage (VCEO) of 300V and a continuous collector current (IC) of 500mA. Offers a minimum DC current gain (hFE) of 40 and a transition frequency (fT) of 50MHz. Maximum power dissipation is 625mW, with an operating temperature range from -55°C to 150°C. Supplied in an ammo pack with 2000 units.
Frequency50MHz
PackageTO-92-3
Voltage300V
Current500mA
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Technical Specifications
Onsemi MPSA92_D75Z technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 300V |
| Collector Emitter Breakdown Voltage | 300V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 300V |
| Collector-emitter Voltage-Max | 500mV |
| Current | 500mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 50MHz |
| Gain Bandwidth Product | 50MHz |
| hFE Min | 40 |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | PNP |
| Power Dissipation | 625mW |
| Radiation Hardening | No |
| Transition Frequency | 50MHz |
| Voltage | 300V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MPSA92_D75Z Datasheet
Download the complete datasheet for Onsemi MPSA92_D75Z to view detailed technical specifications.
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