
P-channel MOSFET, TO-220-3 package, offering a Drain to Source Breakdown Voltage of -100V and a continuous drain current of 10.5A. Features a low Drain-source On Resistance of 300mR, with turn-on delay time of 13ns and fall time of 25ns. Operates within a temperature range of -55°C to 175°C, with a maximum power dissipation of 66W. Through-hole mounting, lead-free, and RoHS compliant.
Onsemi SFP9530 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 10.5A |
| Drain to Source Breakdown Voltage | -100V |
| Drain to Source Resistance | 300mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 300mR |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.035nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 66W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 66W |
| Radiation Hardening | No |
| Rds On Max | 300mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 13ns |
| Weight | 1.8g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi SFP9530 to view detailed technical specifications.
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