The Si3443DV is a single quad drain enhancement P-channel MOSFET with a maximum drain source voltage of 20V and a maximum continuous drain current of 4A. It features a maximum power dissipation of 1600mW and a typical gate charge of 7.2nC at a Vgs of 4.5V. The device is packaged in a TSOT-23 package and has a typical input capacitance of 640pF at a Vds of 10V. The Si3443DV operates over a temperature range of -55 to 150°C and is suitable for use in a variety of applications.
PackageTSOT-23
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Technical Specifications
Onsemi Si3443DV technical specifications.
General
| Configuration | Single Quad Drain |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Process Technology | TMOS |
| Maximum Drain Source Voltage | 20V |
| Maximum Gate Source Voltage | ±8V |
| Maximum Continuous Drain Current | 4A |
| Maximum Drain Source Resistance | [email protected]mOhm |
| Typical Gate Charge @ Vgs | [email protected]nC |
| Typical Input Capacitance @ Vds | 640@10VpF |
| Maximum Power Dissipation | 1600mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Pin Count | 6 |
| Package/Case | TSOT-23 |
| Package Family Name | SOT |
Compliance
| RoHS | Yes |
| RoHS Version | 2011/65/EU, 2015/863 |
Datasheet
Onsemi Si3443DV Datasheet
Download the complete datasheet for Onsemi Si3443DV to view detailed technical specifications.
No datasheet is available for this part.