The SI4431DY is a P-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of -6.3A and a drain to source breakdown voltage of -30V. The device also features a drain to source resistance of 32mR and a power dissipation of 2.5W. The SI4431DY is RoHS compliant and available in a tape and reel packaging with 2500 units per package.
PolarityP-CHANNEL
Power2.5W
Quick Jump:
Technical Specifications
Onsemi SI4431DY technical specifications.
General
| Continuous Drain Current (ID) | -6.3A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 32mR |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 33ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi SI4431DY Datasheet
Download the complete datasheet for Onsemi SI4431DY to view detailed technical specifications.
No datasheet is available for this part.