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Technical Specifications
Onsemi SI4822DY technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 12.5A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 8mR |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 43ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi SI4822DY Datasheet
Download the complete datasheet for Onsemi SI4822DY to view detailed technical specifications.
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