The SI9933ADY is a P-channel MOSFET with a drain to source breakdown voltage of -20V and a continuous drain current of -3.4A. It has a drain to source resistance of 44mR and a power dissipation of 2W. The device is packaged in SOIC and is RoHS compliant. It operates over a temperature range of -55°C to 175°C.
PackageSOIC
PolarityP-CHANNEL
Power2W
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Technical Specifications
Onsemi SI9933ADY technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | -3.4A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 44mR |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 12V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 40ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi SI9933ADY Datasheet
Download the complete datasheet for Onsemi SI9933ADY to view detailed technical specifications.
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