The SI9936DY is a dual N-channel MOSFET with a maximum operating temperature range of -55°C to 150°C. It has a maximum power dissipation of 900mW and a maximum drain-source on resistance of 50mR. The device is packaged in a lead-free SOIC-8 package and is suitable for surface mount applications. The MOSFET has a continuous drain current rating of 5A and a drain to source breakdown voltage of 30V.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power2W
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Technical Specifications
Onsemi SI9936DY technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 5A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 44mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 50MR |
| Element Configuration | Dual |
| Fall Time | 10ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 525pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 900mW |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Rds On Max | 50mR |
| Turn-Off Delay Time | 25ns |
| Weight | 0.2304g |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi SI9936DY Datasheet
Download the complete datasheet for Onsemi SI9936DY to view detailed technical specifications.
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