N-channel power MOSFET featuring 525V drain-source breakdown voltage and 6A continuous drain current. This surface-mount device offers a maximum on-resistance of 980mΩ and a power dissipation of 90W. Designed for high-efficiency switching applications, it operates within a temperature range of -55°C to 150°C and is packaged in a D2PAK (TO-263AB) for robust thermal performance. Key switching characteristics include a 13ns turn-on delay and a 19ns fall time.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power90W
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Technical Specifications
Stmicroelectronics STB7N52K3 technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Breakdown Voltage | 525V |
| Drain to Source Resistance | 850mR |
| Drain to Source Voltage (Vdss) | 525V |
| Drain-source On Resistance-Max | 850mR |
| Fall Time | 19ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 737pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 90W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 90W |
| Radiation Hardening | No |
| Rds On Max | 980mR |
| RoHS Compliant | Yes |
| Series | SuperMESH3™ |
| Turn-Off Delay Time | 36ns |
| Turn-On Delay Time | 13ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STB7N52K3 Datasheet
Download the complete datasheet for Stmicroelectronics STB7N52K3 to view detailed technical specifications.
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