N-channel SuperMESH3™ Power MOSFET, 620V drain-source breakdown voltage, 2.7A continuous drain current, and 2.5 Ohm max drain-source on-resistance. Features a DPAK surface-mount package, 45W power dissipation, and operates from -55°C to 150°C. Includes 385pF input capacitance, 9ns turn-on delay, and 22ns turn-off delay. RoHS compliant and lead-free.
PackageDPAK
MountingSurface Mount
PolarityN-CHANNEL
Power45W
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Technical Specifications
Stmicroelectronics STD3N62K3 technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
2.7A
Drain to Source Breakdown Voltage
620V
Drain to Source Resistance
2.5R
Drain to Source Voltage (Vdss)
620V
Drain-source On Resistance-Max
2.5R
Fall Time
15.6ns
Gate to Source Voltage (Vgs)
30V
Height
2.4mm
Input Capacitance
385pF
Lead Free
Lead Free
Length
6.6mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
45W
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
45W
Radiation Hardening
No
Rds On Max
2.5R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SuperMESH™
Threshold Voltage
3.75V
Turn-Off Delay Time
22ns
Turn-On Delay Time
9ns
Width
6.2mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STD3N62K3 Datasheet
Download the complete datasheet for Stmicroelectronics STD3N62K3 to view detailed technical specifications.
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