N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 1.8 Ohm maximum drain-source on-resistance. This surface mount device offers a continuous drain current of 3.3A and a maximum power dissipation of 50W. Designed with a DPAK package, it exhibits a turn-on delay time of 6ns and a fall time of 31ns. Operating temperature range spans from -55°C to 150°C, with RoHS compliance and lead-free construction.
PackageDPAK
MountingSurface Mount
PolarityN-CHANNEL
Power50W
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Technical Specifications
Stmicroelectronics STD3NM60N technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
3.3A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
1.8R
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
1.8R
Fall Time
31ns
Gate to Source Voltage (Vgs)
25V
Height
2.4mm
Input Capacitance
188pF
Lead Free
Lead Free
Length
6.6mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
50W
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
50W
Radiation Hardening
No
Rds On Max
1.8R
RoHS Compliant
Yes
Series
MDmesh™ II
Turn-Off Delay Time
23ns
Turn-On Delay Time
6ns
Width
6.2mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STD3NM60N Datasheet
Download the complete datasheet for Stmicroelectronics STD3NM60N to view detailed technical specifications.
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