N-channel SuperMESH3™ Power MOSFET, 620V drain-source breakdown voltage, 3.8A continuous drain current, and 1.95 Ohm maximum drain-source on-resistance. Features include a 30V gate-source voltage rating, 450pF input capacitance, and 70W maximum power dissipation. This surface-mount device is housed in a DPAK package with dimensions of 6.6mm (L) x 6.2mm (W) x 2.4mm (H). Operates from -55°C to 150°C, with typical turn-on delay of 10ns and fall time of 19ns. RoHS compliant.
PackageDPAK
MountingSurface Mount
PolarityN-CHANNEL
Power70W
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Technical Specifications
Stmicroelectronics STD4N62K3 technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
3.8A
Drain to Source Breakdown Voltage
620V
Drain to Source Resistance
1.95R
Drain to Source Voltage (Vdss)
620V
Drain-source On Resistance-Max
1.95R
Fall Time
19ns
Gate to Source Voltage (Vgs)
30V
Height
2.4mm
Input Capacitance
450pF
Lead Free
Lead Free
Length
6.6mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
70W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
70W
Radiation Hardening
No
Rds On Max
1.95R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SuperMESH3™
Threshold Voltage
3.75V
Turn-Off Delay Time
29ns
Turn-On Delay Time
10ns
Width
6.2mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STD4N62K3 Datasheet
Download the complete datasheet for Stmicroelectronics STD4N62K3 to view detailed technical specifications.
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