N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 5A continuous drain current. Offers a low 860mΩ typical drain-source on-resistance, with a maximum of 950mΩ. Designed for surface mounting in a DPAK package, this component boasts fast switching characteristics with turn-on delay of 7.6ns and fall time of 15.9ns. Maximum power dissipation is rated at 60W, operating across a temperature range of -55°C to 150°C.
PackageDPAK
MountingSurface Mount
PolarityN-CHANNEL
Power60W
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Technical Specifications
Stmicroelectronics STD7N60M2 technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
5A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
860mR
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
950mR
Fall Time
15.9ns
Gate to Source Voltage (Vgs)
25V
Height
2.4mm
Input Capacitance
271pF
Lead Free
Lead Free
Length
6.6mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
60W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
60W
Radiation Hardening
No
Rds On Max
950mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MDmesh™ II Plus
Threshold Voltage
3V
Turn-Off Delay Time
19.3ns
Turn-On Delay Time
7.6ns
Width
6.2mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STD7N60M2 Datasheet
Download the complete datasheet for Stmicroelectronics STD7N60M2 to view detailed technical specifications.
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