Automotive-grade N-channel power MOSFET featuring 40V drain-source breakdown voltage and 80A continuous drain current. Offers low 5.5 mOhm typical drain-source on-resistance for efficient power switching. Designed for surface mounting in a DPAK package, operating from -55°C to 175°C with a maximum power dissipation of 70W. Includes fast switching characteristics with turn-on delay of 10.5ns and fall time of 11.9ns.
PackageDPAK
MountingSurface Mount
PolarityN-CHANNEL
Power70W
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Technical Specifications
Stmicroelectronics STD80N4F6 technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
80A
Drain to Source Breakdown Voltage
40V
Drain to Source Resistance
6mR
Drain to Source Voltage (Vdss)
40V
Drain-source On Resistance-Max
6MR
Fall Time
11.9ns
Gate to Source Voltage (Vgs)
20V
Height
2.4mm
Input Capacitance
2.15nF
Lead Free
Lead Free
Length
6.6mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
70W
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
70W
Radiation Hardening
No
Rds On Max
6mR
RoHS Compliant
Yes
Series
STripFET™ VI, DeepGATE™
Turn-Off Delay Time
46.1ns
Turn-On Delay Time
10.5ns
Width
6.2mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STD80N4F6 Datasheet
Download the complete datasheet for Stmicroelectronics STD80N4F6 to view detailed technical specifications.
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