N-channel Power MOSFET featuring 650V drain-source breakdown voltage and 5.5A continuous drain current. Offers 780mΩ maximum drain-source on-resistance and 60W power dissipation. Designed for surface mounting in a DPAK package, this component boasts fast switching characteristics with turn-on delay of 8.8ns and fall time of 13.5ns. Operating temperature range spans -55°C to 150°C, with RoHS compliance and lead-free construction.
PackageDPAK
MountingSurface Mount
PolarityN-CHANNEL
Power60W
Quick Jump:
Technical Specifications
Stmicroelectronics STD9N60M2 technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
5.5A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
780mR
Drain to Source Voltage (Vdss)
650V
Drain-source On Resistance-Max
780mR
Fall Time
13.5ns
Gate to Source Voltage (Vgs)
25V
Height
2.4mm
Input Capacitance
320pF
Lead Free
Lead Free
Length
6.6mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
60W
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
60W
Radiation Hardening
No
Rds On Max
780mR
RoHS Compliant
Yes
Series
MDmesh™ II Plus
Turn-Off Delay Time
22ns
Turn-On Delay Time
8.8ns
Width
6.2mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STD9N60M2 Datasheet
Download the complete datasheet for Stmicroelectronics STD9N60M2 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.