
N-channel Power MOSFET featuring 620V drain-source breakdown voltage and 2.7A continuous drain current. This SuperMESH3™ device offers a low 2.2 Ohm typical drain-source resistance and is housed in a TO-220FP package for through-hole mounting. Key electrical characteristics include a 385pF input capacitance and fast switching times with a 9ns turn-on delay and 22ns turn-off delay. Maximum power dissipation is rated at 45W, with a maximum operating temperature of 150°C.
Stmicroelectronics STF3N62K3 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 2.7A |
| Drain to Source Breakdown Voltage | 620V |
| Drain to Source Resistance | 2.5R |
| Drain to Source Voltage (Vdss) | 620V |
| Fall Time | 15.6ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 16.4mm |
| Input Capacitance | 385pF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 20W |
| Mount | Through Hole |
| Nominal Vgs | 3.75V |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 45W |
| Radiation Hardening | No |
| Rds On Max | 2.5R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SuperMESH™ |
| Threshold Voltage | 3.75V |
| Turn-Off Delay Time | 22ns |
| Turn-On Delay Time | 9ns |
| Width | 4.6mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STF3N62K3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
