N-channel SuperMESH™ Power MOSFET featuring 800V drain-source breakdown voltage and 2.5A continuous drain current. This through-hole component offers a maximum drain-source on-resistance of 4.5 Ohms and a typical value of 3.8 Ohms. Designed for high voltage applications, it operates within a temperature range of -55°C to 150°C and has a power dissipation of 25W. The MOSFET is housed in a TO-220FP package and exhibits fast switching characteristics with turn-on delay time of 17ns and fall time of 40ns.
PackageTO-220-3
Current Rating2.5A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STF3NK80Z technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 2.5A |
| Current Rating | 2.5A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 4.5R |
| Drain to Source Voltage (Vdss) | 800V |
| Drain-source On Resistance-Max | 4.5R |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.3mm |
| Input Capacitance | 485pF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 25W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 25W |
| Radiation Hardening | No |
| Rds On Max | 4.5R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SuperMESH™ |
| Threshold Voltage | 3.75V |
| Turn-Off Delay Time | 36ns |
| Turn-On Delay Time | 17ns |
| DC Rated Voltage | 800V |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STF3NK80Z Datasheet
Download the complete datasheet for Stmicroelectronics STF3NK80Z to view detailed technical specifications.
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