N-channel PowerMESH™ power MOSFET featuring 1500V drain-source breakdown voltage and 2.5A continuous drain current. Offers a typical 6 Ohm drain-source on-resistance and a maximum power dissipation of 63W. Designed for through-hole mounting in a TO-3PF package, this component operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 24ns turn-on delay and a 45ns turn-off delay.
MountingThrough Hole
PolarityN-CHANNEL
Power63W
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Technical Specifications
Stmicroelectronics STFW3N150 technical specifications.
General
| Continuous Drain Current (ID) | 2.5A |
| Drain to Source Breakdown Voltage | 1.5kV |
| Drain to Source Resistance | 9R |
| Drain to Source Voltage (Vdss) | 1.5kV |
| Drain-source On Resistance-Max | 9R |
| Fall Time | 61ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 26.7mm |
| Input Capacitance | 939pF |
| Lead Free | Lead Free |
| Length | 15.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 63W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 63W |
| Radiation Hardening | No |
| Rds On Max | 9R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerMESH™ |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 24ns |
| Width | 5.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STFW3N150 Datasheet
Download the complete datasheet for Stmicroelectronics STFW3N150 to view detailed technical specifications.
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