N-channel Power MOSFET featuring 800V drain-source breakdown voltage and 3.6A continuous drain current. Offers a low 0.95 Ohm typical on-resistance and 1.2 Ohm maximum Rds(on). Designed for surface mount applications in a compact 5x6 VHV package with a height of 0.95mm. Includes fast switching characteristics with turn-on delay of 11.3ns and fall time of 20.2ns. Rated for a maximum power dissipation of 42W and operates across a wide temperature range from -55°C to 150°C.
MountingSurface Mount
PolarityN-CHANNEL
Power42W
Quick Jump:
Technical Specifications
Stmicroelectronics STL7N80K5 technical specifications.
General
Continuous Drain Current (ID)
3.6A
Drain to Source Breakdown Voltage
800V
Drain to Source Resistance
1.2R
Drain to Source Voltage (Vdss)
800V
Fall Time
20.2ns
Gate to Source Voltage (Vgs)
30V
Height
0.95mm
Input Capacitance
360pF
Lead Free
Lead Free
Length
6.35mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
42W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
42W
Rds On Max
1.2R
RoHS Compliant
Yes
Series
SuperMESH5™
Turn-Off Delay Time
23.7ns
Turn-On Delay Time
11.3ns
Width
5.4mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STL7N80K5 Datasheet
Download the complete datasheet for Stmicroelectronics STL7N80K5 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.