N-channel power MOSFET featuring 650V drain-source breakdown voltage and 7A continuous drain current. Offers a low 600mΩ drain-source on-resistance. Designed for surface mounting with a 5.1mm x 5.1mm x 0.95mm package. Includes fast switching characteristics with 50ns turn-on delay and 11ns fall time. Rated for 70W power dissipation and RoHS compliant.
MountingSurface Mount
PolarityN-CHANNEL
Power70W
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Technical Specifications
Stmicroelectronics STL8N65M5 technical specifications.
General
| Continuous Drain Current (ID) | 7A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 600mR |
| Drain to Source Voltage (Vdss) | 650V |
| Drain-source On Resistance-Max | 600mR |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 0.95mm |
| Input Capacitance | 690pF |
| Lead Free | Lead Free |
| Length | 5.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 70W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 70W |
| Radiation Hardening | No |
| Rds On Max | 600mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ V |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 50ns |
| Width | 5.1mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STL8N65M5 Datasheet
Download the complete datasheet for Stmicroelectronics STL8N65M5 to view detailed technical specifications.
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