N-channel Power MOSFET featuring 800V drain-source breakdown voltage and 4.5A continuous drain current. Offers a typical 0.8 Ohm drain-source resistance, with a maximum of 950mR. Designed for surface mounting in a 5x6 VHV PowerFLAT package, this component boasts fast switching characteristics with turn-on delay of 12ns and fall time of 20ns. Maximum power dissipation is 42W, operating from -55°C to 150°C.
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STL8N80K5 technical specifications.
General
Continuous Drain Current (ID)
4.5A
Drain to Source Breakdown Voltage
800V
Drain to Source Resistance
800mR
Drain to Source Voltage (Vdss)
800V
Fall Time
20ns
Gate to Source Voltage (Vgs)
30V
Height
0.95mm
Input Capacitance
450pF
Lead Free
Lead Free
Length
5.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
42W
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
950mR
RoHS Compliant
Yes
Series
SuperMESH5™
Turn-Off Delay Time
32ns
Turn-On Delay Time
12ns
Width
6.35mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STL8N80K5 Datasheet
Download the complete datasheet for Stmicroelectronics STL8N80K5 to view detailed technical specifications.
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