N-channel power MOSFET featuring 800V drain-source breakdown voltage and 11A continuous drain current. This through-hole component offers a low 0.35 Ohm typical drain-source on-resistance and 150W power dissipation. Encased in a TO-220 package, it operates within a -65°C to 150°C temperature range and includes fast switching characteristics with a 15ns fall time. RoHS compliant and lead-free.
PackageTO-220
Current Rating11A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STP11NM80 technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 11A |
| Current Rating | 11A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 400mR |
| Drain to Source Voltage (Vdss) | 800V |
| Drain-source On Resistance-Max | 400mR |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.15mm |
| Input Capacitance | 1.63nF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 150W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 150W |
| Radiation Hardening | No |
| Rds On Max | 400mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MDmesh™ |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 46ns |
| Turn-On Delay Time | 22ns |
| DC Rated Voltage | 800V |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP11NM80 Datasheet
Download the complete datasheet for Stmicroelectronics STP11NM80 to view detailed technical specifications.
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