N-channel Power MOSFET featuring 1500V drain-source breakdown voltage and 4A continuous drain current. This through-hole component offers a typical 5 Ohm drain-source on-resistance, with a maximum of 7 Ohm. Operating within a -55°C to 150°C temperature range, it dissipates up to 160W and includes a 4V threshold voltage. The TO-220 package facilitates easy mounting, and the device is RoHS compliant.
PackageTO-220
Current Rating4A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STP4N150 technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 4A |
| Current Rating | 4A |
| Drain to Source Breakdown Voltage | 1.5kV |
| Drain to Source Resistance | 5R |
| Drain to Source Voltage (Vdss) | 1.5kV |
| Drain-source On Resistance-Max | 7R |
| Fall Time | 45ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 15.75mm |
| Input Capacitance | 1.3nF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 160W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 160W |
| Radiation Hardening | No |
| Rds On Max | 7R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerMESH™ |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 35ns |
| DC Rated Voltage | 1.5kV |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP4N150 Datasheet
Download the complete datasheet for Stmicroelectronics STP4N150 to view detailed technical specifications.
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