N-CHANNEL POWER MOSFET, TO-220 package, featuring 500V drain-source breakdown voltage and 3A continuous drain current. Offers a maximum on-state resistance of 2.7 ohms. Operates with a gate-source voltage up to 30V and a nominal threshold voltage of 3.75V. Includes fast switching characteristics with turn-on delay time of 10ns and fall time of 11ns. Maximum power dissipation is 45W.
PackageTO-220
Current Rating3A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STP4NK50Z technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 3A |
| Current Rating | 3A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 2.7R |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 2.7R |
| Dual Supply Voltage | 500V |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 310pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 45W |
| Mount | Through Hole |
| Nominal Vgs | 3.75V |
| Number of Elements | 1 |
| On-State Resistance | 2.7R |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 45W |
| Radiation Hardening | No |
| Rds On Max | 2.7R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SuperMESH™ |
| Termination | Through Hole |
| Threshold Voltage | 3.75V |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | 500V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP4NK50Z Datasheet
Download the complete datasheet for Stmicroelectronics STP4NK50Z to view detailed technical specifications.
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