
N-Channel Power MOSFET, 55V Vds, 80A Continuous Drain Current, 8mΩ Max Rds(on). Features 300W Max Power Dissipation, 175°C Max Operating Temperature, and TO-220-3 through-hole package. Includes 35ns turn-on delay, 70ns turn-off delay, and 55ns fall time. Input capacitance is 4.05nF. Lead-free and RoHS compliant.
Stmicroelectronics STP85NF55L technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 8mR |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 8mR |
| Fall Time | 55ns |
| Gate to Source Voltage (Vgs) | 15V |
| Input Capacitance | 4.05nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 8mR |
| RoHS Compliant | Yes |
| Series | STripFET™ II |
| Turn-Off Delay Time | 70ns |
| Turn-On Delay Time | 35ns |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STP85NF55L to view detailed technical specifications.
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