N-channel power MOSFET featuring 40V drain-source breakdown voltage and 80A continuous drain current. Offers low 5.4mOhm typical on-resistance (6.2mR max) for efficient power switching. Packaged in a TO-220 through-hole mount, this device boasts a maximum power dissipation of 110W and operates across a wide temperature range of -55°C to 175°C. Includes fast switching characteristics with 15ns turn-on and 15ns fall times.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power110W
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Technical Specifications
Stmicroelectronics STP95N4F3 technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
80A
Drain to Source Breakdown Voltage
40V
Drain to Source Resistance
6.2mR
Drain to Source Voltage (Vdss)
40V
Fall Time
15ns
Gate to Source Voltage (Vgs)
20V
Height
15.75mm
Input Capacitance
2.2nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
110W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
110W
Radiation Hardening
No
Rds On Max
6.2mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
STripFET™ III
Threshold Voltage
2V
Turn-Off Delay Time
40ns
Turn-On Delay Time
15ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP95N4F3 Datasheet
Download the complete datasheet for Stmicroelectronics STP95N4F3 to view detailed technical specifications.
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