N-channel PowerMESH™ power MOSFET featuring a 1500V drain-to-source breakdown voltage and 2.5A continuous drain current. This through-hole component offers a low 9 Ohm typical drain-to-source resistance and a maximum power dissipation of 140W. Housed in a TO-247 package, it operates within a temperature range of -50°C to 150°C and includes fast switching characteristics with a 45ns turn-off delay and 61ns fall time. RoHS compliant and lead-free.
PackageTO-247
MountingThrough Hole
PolarityN-CHANNEL
Power140W
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Technical Specifications
Stmicroelectronics STW3N150 technical specifications.
General
Package/Case
TO-247
Continuous Drain Current (ID)
2.5A
Drain to Source Breakdown Voltage
1.5kV
Drain to Source Resistance
9R
Drain to Source Voltage (Vdss)
1.5kV
Fall Time
61ns
Gate to Source Voltage (Vgs)
30V
Height
20.15mm
Input Capacitance
939pF
Lead Free
Lead Free
Length
15.75mm
Max Operating Temperature
150°C
Min Operating Temperature
-50°C
Max Power Dissipation
140W
Mount
Through Hole
Number of Elements
1
Package Quantity
30
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
140W
Radiation Hardening
No
Rds On Max
9R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerMESH™
Threshold Voltage
4V
Turn-Off Delay Time
45ns
Turn-On Delay Time
24ns
Width
5.15mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STW3N150 Datasheet
Download the complete datasheet for Stmicroelectronics STW3N150 to view detailed technical specifications.
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