
N-channel PowerMESH™ power MOSFET featuring a 1500V drain-to-source breakdown voltage and 2.5A continuous drain current. This through-hole component offers a low 9 Ohm typical drain-to-source resistance and a maximum power dissipation of 140W. Housed in a TO-247 package, it operates within a temperature range of -50°C to 150°C and includes fast switching characteristics with a 45ns turn-off delay and 61ns fall time. RoHS compliant and lead-free.
Stmicroelectronics STW3N150 technical specifications.
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