NPN bipolar junction transistor in TO-220-3 package. Features a 100V collector-emitter voltage (VCEO) and a 3A continuous collector current. Offers a maximum power dissipation of 40W and a transition frequency of 3MHz. Operates within a temperature range of -65°C to 150°C. Through-hole mounting design.
Frequency3MHz
PackageTO-220-3
Current Rating3A
MountingThrough Hole
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Technical Specifications
Onsemi TIP31C technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 1.2V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 1.2V |
| Current Rating | 3A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 3MHz |
| Height | 16.51mm |
| hFE Min | 10 |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Collector Current | 3A |
| Max Frequency | 3MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 40W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 3MHz |
| DC Rated Voltage | 100V |
| Weight | 1.214g |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi TIP31C Datasheet
Download the complete datasheet for Onsemi TIP31C to view detailed technical specifications.
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