60 V N-channel power MOSFET in a TO-252 (D-PAK) package using trench DMOS technology. It is rated for 92 A continuous drain current at TC=25 °C, 58 A at TC=100 °C, and 78 W power dissipation at TC=25 °C. Maximum drain-source on-resistance is 5.8 mΩ at 10 V gate drive and 8.3 mΩ at 4.5 V, with typical total gate charge of 35.3 nC. The device supports -55 °C to 150 °C junction operation and is intended for charger adapters, power tools, LED lighting, and other fast-switching power applications.
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PFC Device PRM5R8N06D technical specifications.
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage | 60V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current (TC=25°C) | 92A |
| Continuous Drain Current (TC=100°C) | 58A |
| Pulsed Drain Current | 240A |
| Power Dissipation (TC=25°C) | 78W |
| Drain-Source On-Resistance @ VGS=10V | 5.8 maxmΩ |
| Drain-Source On-Resistance @ VGS=4.5V | 8.3 maxmΩ |
| Gate Threshold Voltage | 1.0 to 2.5V |
| Total Gate Charge | 35.3 typnC |
| Input Capacitance | 2174 typpF |
| Output Capacitance | 762 typpF |
| Reverse Transfer Capacitance | 38 typpF |
| Junction Temperature Range | -55 to 150°C |
| Thermal Resistance Junction-to-Case | 1.6 max°C/W |
Download the complete datasheet for PFC Device PRM5R8N06D to view detailed technical specifications.
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