The 1S2076TD is a silicon mixer diode with a maximum capacitance of 3pF and a maximum power dissipation of 250mW. It features a planar doped barrier technology and is packaged in a DO-35 case with isolated connections. The diode has a wire terminal form and an axial terminal position, with a tin finish. It is not qualified and is not RoHS compliant.
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Technical Specifications
Renesas 1S2076TD technical specifications.
General
| Additional Feature | HIGH RELIABILITY |
| Case Connection | Isolated |
| Diode Capacitance-Max | 3pF |
| Diode Element Material | SILICON |
| Diode Type | MIXER |
| JEDEC-95 Code | DO-35 |
| JESD-30 Code | O-LALF-W2 |
| JESD-609 Code | e0 |
| Max Power Dissipation | 250mW |
| Number of Elements | 1 |
| Package Body Material | Glass |
| Package Shape | Round |
| Package Style | LONG FORMMeter |
| Qualification Status | Not Qualified |
| RoHS Compliant | No |
| Surface Mount | No |
| Technology | PLANAR DOPED BARRIER |
| Terminal Finish | Tin |
| Terminal Form | Wire |
| Terminal Position | AXIAL |
Compliance
| RoHS | Not Compliant |
Datasheet
Renesas 1S2076TD Datasheet
Download the complete datasheet for Renesas 1S2076TD to view detailed technical specifications.
No datasheet is available for this part.