The 1SS82TD is a silicon rectifier diode with a maximum output current of 200mA and a maximum power dissipation of 400mW. It features a DO-35 package with an axial lead connection. The diode is made of silicon and has a round package shape with a glass body. The terminal finish is tin and the terminal form is wire. The device is not RoHS compliant and is not qualified.
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Technical Specifications
Renesas 1SS82TD technical specifications.
General
| Additional Feature | HIGH RELIABILITY |
| Case Connection | Isolated |
| Diode Element Material | SILICON |
| Diode Type | RECTIFIER |
| JEDEC-95 Code | DO-35 |
| JESD-30 Code | O-LALF-W2 |
| JESD-609 Code | e0 |
| Max Output Current | 200mA |
| Max Power Dissipation | 400mW |
| Number of Elements | 1 |
| Number of Phases | 1 |
| Package Body Material | Glass |
| Package Shape | Round |
| Package Style | LONG FORMMeter |
| Qualification Status | Not Qualified |
| Reverse Recovery Time-Max | 0.1us |
| RoHS Compliant | No |
| Surface Mount | No |
| Terminal Finish | Tin |
| Terminal Form | Wire |
| Terminal Position | AXIAL |
Compliance
| RoHS | Not Compliant |
Datasheet
Renesas 1SS82TD Datasheet
Download the complete datasheet for Renesas 1SS82TD to view detailed technical specifications.
No datasheet is available for this part.