Renesas
3SK295ZQ-TL
N-Channel Metal-Oxide Semiconductor FET, 25mA, Ultra High Frequency, 1-Element, Small Outline Package
The 3SK295ZQ-TL is a single N-channel metal-oxide semiconductor FET from Renesas, featuring a maximum drain current of 25mA and operation in the ultra high frequency band. This device has a small outline package with a rectangular shape and is made of plastic. It is designed for amplifier applications and has a silicon transistor element. The FET is available in a dual terminal position with a gull wing terminal form and a tin terminal finish.
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Technical Specifications
Renesas 3SK295ZQ-TL technical specifications.
General
| Case Connection | SOURCE |
| Drain Current-Max (ID) | 25mA |
| Feedback Cap-Max (Crss) | 0.03pF |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Highest Frequency Band | ULTRA HIGH FREQUENCY BAND |
| JESD-30 Code | R-PDSO-G4 |
| JESD-609 Code | e0 |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Polarity/Channel Type | N-CHANNEL |
| Qualification Status | Not Qualified |
| RoHS Compliant | No |
| Surface Mount | Yes |
| Terminal Finish | Tin |
| Terminal Form | Gull Wing |
| Terminal Position | DUAL |
| Transistor Application | AMPLIFIER |
| Transistor Element Material | SILICON |
Compliance
| RoHS | Not Compliant |
Datasheet
Renesas 3SK295ZQ-TL Datasheet
Download the complete datasheet for Renesas 3SK295ZQ-TL to view detailed technical specifications.
No datasheet is available for this part.