The BA1A4M-A is a single NPN transistor with a maximum collector-emitter voltage of 50V and a minimum DC current gain of 80. It has a maximum collector current of 100mA and a turn-on time of 200ns. The transistor is made of silicon and has a rectangular package with a plastic body. It is not qualified and is not suitable for surface mount applications, with a through-hole terminal form and single terminal position.
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Technical Specifications
Renesas BA1A4M-A technical specifications.
General
| Collector-emitter Voltage-Max | 50V |
| DC Current Gain-Min (hFE) | 80 |
| JESD-30 Code | R-PSIP-T3 |
| Max Collector Current | 100mA |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | IN-LINEMeter |
| Polarity/Channel Type | NPN |
| Qualification Status | Not Qualified |
| Surface Mount | No |
| Terminal Form | Through Hole |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Turn-off Time-Max (toff) | 6000ns |
| Turn-on Time-Max (ton) | 200ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Renesas BA1A4M-A Datasheet
Download the complete datasheet for Renesas BA1A4M-A to view detailed technical specifications.
No datasheet is available for this part.