The FX70SMJ-03 is a single P-channel metal-oxide semiconductor field-effect transistor with a minimum breakdown voltage of 30V and a maximum pulsed drain current of 280A. It features a maximum drain-source on resistance of 12.3 milliohms and a maximum drain current of 70 amperes. The device is available in a rectangular plastic package with a flange mount style and through hole terminals. It is not qualified according to JESD-30 Code R-PSFM-T3.
Renesas FX70SMJ-03 technical specifications.
| Case Connection | DRAIN |
| Drain Current-Max (ID) | 70A |
| Drain-source On Resistance-Max | 12.3mR |
| DS Breakdown Voltage-Min | 30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | FLANGE MOUNTMeter |
| Polarity/Channel Type | P-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 280A |
| Qualification Status | Not Qualified |
| Surface Mount | No |
| Terminal Form | Through Hole |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| RoHS | Not Compliant |
No datasheet is available for this part.
