Renesas
HAF2017-90STL-E
N-Channel Metal-Oxide Semiconductor FET, 20A, 53mR, 60V, Single, Rectangular, Plastic
The HAF2017-90STL-E is a single N-channel metal-oxide semiconductor FET from Renesas. It has a maximum drain current of 20A and a maximum drain-source on resistance of 53mR. The device can withstand a minimum breakdown voltage of 60V. It is packaged in a rectangular plastic case with a gull wing terminal form and is suitable for switching applications. The FET is RoHS compliant and has a moisture sensitivity level of 1. It can be mounted using surface mount techniques and has a peak reflow temperature of 245°C.
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Technical Specifications
Renesas HAF2017-90STL-E technical specifications.
General
| Case Connection | DRAIN |
| Drain Current-Max (ID) | 20A |
| Drain-source On Resistance-Max | 53mR |
| DS Breakdown Voltage-Min | 60V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-609 Code | e6 |
| Moisture Sensitivity Level | 1 |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Peak Reflow Temperature (Cel) | 245°C |
| Polarity/Channel Type | N-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 40A |
| Qualification Status | Not Qualified |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Terminal Finish | Tin |
| Terminal Form | Gull Wing |
| Terminal Position | SINGLE |
| Time @ Peak Reflow Temperature-Max (s) | 20s |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Compliance
| RoHS | Compliant |
Datasheet
Renesas HAF2017-90STL-E Datasheet
Download the complete datasheet for Renesas HAF2017-90STL-E to view detailed technical specifications.
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